| PART |
Description |
Maker |
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| ARF448A03 ARF448A ARF448B |
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| J310 |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
TEMIC SEMICONDUCTORS
|
| PMBFJ310-T |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
|
NXP SEMICONDUCTORS
|
| 2SK161 |
N CHANNEL JUNCTION TYPE (FM TUNER/ VHF BAND AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
